EXPERIMENTAL AND THEORETICAL ELECTRON MOBILITY OF MODULATION DOPED AlxGa1 - xAs/GaAs HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY.

被引：0
|
作者：
Drummond, T.J. [1 ]
Morkoc, H. [1 ]
Hess, K. [1 ]
Cho, A.Y. [1 ]
机构：
[1] Department of Electrical Engineering, Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801, United States
来源：
| 1600年 / 52期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
13
引用
收藏
相关论文
共 50 条
  • [31] Increased mobility anisotropy in selectively doped AlxGa1-xAs/GaAs heterostructures with high electron densities
    Reuter, D
    Versen, M
    Schneider, MD
    Wieck, AD
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 321 - 325
  • [32] Study of photoconductivity in AlxGa1-xAs/GaAs modulation-doped heterostructures
    Peng, ZL
    Saku, T
    Horikoshi, Y
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3592 - 3596
  • [33] Structural and defect characterization of GaAs and AlxGa1-xAs grown at low temperature by molecular beam epitaxy
    Fleischer, S
    Beling, CD
    Fung, S
    Nieveen, WR
    Squire, JE
    Zheng, JQ
    Missous, M
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) : 190 - 198
  • [34] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    HOLONYAK, N
    DRUMMOND, TJ
    CAMRAS, MD
    FISCHER, R
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
  • [35] HIGH-PURITY GAAS AND ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    FURUHATA, N
    OKAMOTO, A
    HOSHINO, H
    JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) : 814 - 818
  • [36] Research on dynamics in modulation-doped GaAs/AlxGa1-xAs heterostructures
    Li, GH
    Zhou, SP
    Xu, DM
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2001, 31 (02) : 93 - 95
  • [37] TRANSIENT ANNEALING OF MODULATION-DOPED GAAS/ALXGA1-XAS HETEROSTRUCTURES
    HENDERSON, T
    PEARAH, P
    MORKOC, H
    NILSSON, B
    ELECTRONICS LETTERS, 1984, 20 (09) : 371 - 373
  • [38] TRANSMISSION ELECTRON MICROSCOPY STUDY OF DEFECTS IN Sn-DOPED GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.
    Chen, S.H.
    Carter, C.B.
    Enquist, P.
    Applied physics. A, Solids and surfaces, 1987, A44 (02): : 143 - 151
  • [39] Structural characterization of interfaces in the AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructures by high-resolution X-ray reflectometry and diffractometry
    A. A. Lomov
    A. G. Sutyrin
    D. Yu. Prokhorov
    G. B. Galiev
    Yu. V. Khabarov
    M. A. Chuev
    R. M. Imamov
    Crystallography Reports, 2005, 50 : 739 - 750
  • [40] PROPERTIES OF Mg DOPED GaAs AND AlxGa1 - xAs GROWN BY LPE AT 700 degree C.
    Liu, Hongxun
    Zhang, Pei
    Wang, Shumin
    Yu, Lisheng
    Wang, Weiyi
    Pang, Mingxue
    Zhao, Yang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1987, 8 (02): : 214 - 217
12345