ELECTRON MICROSCOPICAL ANALYSIS OF THE STACKING-FAULT BEHAVIOR IN INERT-GAS ANNEALED CZOCHRALSKI SILICON

被引：0
|
作者：
BENDER, H [1 ]
CLAEYS, C [1 ]
VANLANDUYT, J [1 ]
DECLERCK, G [1 ]
AMELINCKX, S [1 ]
VANOVERSTRAETEN, R [1 ]
机构：
[1] CATHOLIC UNIV LEUVEN, ESAT, B-3030 HEVERLE, BELGIUM
来源：
LECTURE NOTES IN PHYSICS | 1983年 / 175卷
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：134 / 139
页数：6
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