ANGULAR-DISTRIBUTION OF PHOTOELECTRONS FROM (111) SILICON SURFACE STATES

被引：32

作者：

TRAUM, MM ^{[1
]}

ROWE, JE ^{[1
]}

SMITH, NE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.568769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：298 / 300

页数：3

共 13 条

[1] SURFACE STATES AND SURFACE BONDS OF SI(111) [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :106-109

[2] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228

[3] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[4] CHEMISORPTION BOND GEOMETRY DETERMINED BY PHOTOEMISSION [J].

GADZUK, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :275-275

[5]

GADZUK JW, TO BE PUBLISHED

[6] THEORY OF ANGULAR RESOLVED PHOTOEMISSION FROM ADSORBATES [J].

LIEBSCH, A .

PHYSICAL REVIEW LETTERS, 1974, 32 (21) :1203-1206

[7] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111) [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1974, 32 (25) :1433-1436

[8] PHOTOEMISSION MEASUREMENT OF SURFACE STATES FOR ANNEALED SILICON [J].

ROWE, JE .

PHYSICS LETTERS A, 1974, A 46 (06) :400-402

[9] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1974, 32 (08) :421-424

[10] MAPPING ENERGY-BANDS IN LAYER COMPOUNDS FROM ANGULAR-DEPENDENCE OF ULTRAVIOLET PHOTOEMISSION [J].

SMITH, NV ;

TRAUM, MM ;

DISALVO, FJ .

SOLID STATE COMMUNICATIONS, 1974, 15 (02) :211-214

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