PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE

被引：61
|
作者：
GREGORY, PE [1 ]
SPICER, WE [1 ]
机构：
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
来源：
PHYSICAL REVIEW B | 1975年 / 12卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.12.2370
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2370 / 2381
页数：12
相关论文
共 50 条
  • [11] Photoemission studies of surface, interface and bulk properties of GaAs (001) treated by mg
    Feng, PX
    Riley, JD
    Leckey, RCG
    PHYSICA SCRIPTA, 2004, 69 (01) : 69 - 73
  • [12] PHOTOEMISSION FROM GAAS-CS-SB(TE)
    HAGINO, M
    NISHIDA, R
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) : 123 - &
  • [13] Photoemission study of Gd/GaAs(110) interface
    Chaika, AN
    Grazhulis, VA
    Ionov, AM
    Molodtsov, SL
    Laubschat, C
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 5-6 : 157 - 172
  • [14] PHOTOEMISSION EFFICIENCY AND PERSISTENCE OF (CS, F) AND (CS, O) ACTIVATED GAAS(110)
    WEISSMAN, E
    SHAPIRA, Y
    VACUUM, 1990, 41 (4-6) : 1006 - 1008
  • [15] PHOTOEMISSION AND RHEED STUDIES OF BONDING PROPERTIES AT THE CAF2/GAAS(001) INTERFACE
    MARUO, YY
    OSHIMA, M
    WAHO, T
    KAWAMURA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (02): : L299 - L302
  • [16] PHOTOEMISSION SPECTROSCOPY STUDIES OF A CU-GAAS (110) INTERFACE USING SYNCHROTRON RADIATION
    PAN, SH
    CHINESE PHYSICS, 1989, 9 (01): : 231 - 237
  • [17] Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface
    Benemanskaya, G. V.
    Dementev, P. A.
    Kukushkin, S. A.
    Lapushkin, M. N.
    Osipov, A. V.
    Timoshnev, S. N.
    TECHNICAL PHYSICS LETTERS, 2016, 42 (12) : 1145 - 1148
  • [18] Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface
    G. V. Benemanskaya
    P. A. Dementev
    S. A. Kukushkin
    M. N. Lapushkin
    A. V. Osipov
    S. N. Timoshnev
    Technical Physics Letters, 2016, 42 : 1145 - 1148
  • [19] OPTIMIZED PHOTOEMISSION FROM GAAS-CS2O
    SONNENBE.H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (01): : 89 - &
  • [20] Photoemission study of the reactive Dy/GaAs(110) interface
    Chaika, AN
    Grazhulis, VA
    Ionov, AM
    Kashkarov, PK
    Molodtsov, SL
    Shikin, AM
    Laubschat, C
    SURFACE SCIENCE, 1999, 433 : 352 - 356
12345