INTERIMPURITY ABSORPTION OF INFRARED RADIATION IN LIGHTLY DOPED SEMICONDUCTORS

被引：0

作者：

BARANOVSKII, SD

UZAKOV, AA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1026 / 1028

页数：3

共 50 条

[31] KINETICS OF DONOR-ACCEPTOR RECOMBINATION IN LIGHTLY DOPED COMPENSATED SEMICONDUCTORS
STYS, LE
FOIGEL, MG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 139 - 142
[32] SEMICONDUCTOR INSULATOR TRANSITION IN LIGHTLY DOPED HEAT-TREATED SEMICONDUCTORS
BAGRAEV, NT
MASHKOV, VA
MUKOVNIKOV, KV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (04): : 379 - 381
[33] IMPURITY HOPPING TRANSPORT IN MODERATELY DOPED, LIGHTLY-COMPENSATED SEMICONDUCTORS
BARON, R
YOUNG, MH
SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 204 - 204
[34] THEORY OF HIGH-FREQUENCY HOPPING CONDUCTION IN LIGHTLY DOPED SEMICONDUCTORS
BARANOVSKII, SD
UZAKOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 533 - 536
[35] CHARACTERISTICS OF DONOR-ACCEPTOR RECOMBINATION IN LIGHTLY DOPED COMPENSATED SEMICONDUCTORS
STYS, LE
FOIGEL, MG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 135 - 139
[36] THEORY OF INTER-IMPURITY RADIATIVE RECOMBINATION IN LIGHTLY DOPED SEMICONDUCTORS
OSIPOV, VV
FOIGEL, MG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 311 - 316
[37] EFFECT OF PRESSURE ON THE INFRARED ABSORPTION OF SEMICONDUCTORS
NEURINGER, LJ
PHYSICAL REVIEW, 1959, 113 (06): : 1495 - 1503
[38] THEORY OF THE INFRARED ABSORPTION BY CARRIERS IN SEMICONDUCTORS
DINGLE, RB
PHYSICAL REVIEW, 1955, 99 (06): : 1901 - 1902
[39] INFRARED-ABSORPTION BY RADIATION DEFECTS IN ALUMINUM-DOPED SILICON
LAPPO, MT
SURGANOVA, TF
TADEUSH, NN
CHERNYI, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 346 - 347
[40] INTERIMPURITY RADIATIVE RECOMBINATION IN SEMICONDUCTORS OF THE SILICON TYPE.
Vyazovskii, M.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 649 - 651

← 1 2 3 4 5 →