PRECIPITATION IN CZOCHRALSKI SILICON WAFERS DURING HIGH-TEMPERATURE OXIDATION

被引：0
|
作者：
YUE, JT [1 ]
RUIZ, HJ [1 ]
机构：
[1] TEXAS INSTR INC,DALLAS,TX 75222
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C116 / C116
页数：1
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