QUASI-2-DIMENSIONAL SIMULATION OF TRANSIENT LATCHUP EFFECT IN VLSI CMOS CIRCUITS

被引：7
|
作者：
HARTER, J
JACOBS, H
ZWAR, M
SKAPA, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期
关键词：
D O I：
10.1109/T-ED.1985.22177
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1665 / 1668
页数：4
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