RUTHERFORD BACKSCATTERING MEASUREMENTS OF DOPANT CONCENTRATION IN CD-IMPLANTED GALLIUM-ARSENIDE

被引：1
|
作者：
INADA, T [1 ]
TAKAHASHI, T [1 ]
SAWADA, M [1 ]
KITAHARA, M [1 ]
机构：
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期
关键词：
D O I：
10.1016/0168-583X(85)90595-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：438 / 442
页数：5
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