TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX IN SEMICONDUCTORS

The temperature coefficients of the refractive indices of Ge, Si, InAs, GaAs, InP, GaP, CdSe, ZnSe, and ZnS are measured by a prism technique in spectral ranges of up to X = 1 2, um at 15-350 C. Numerical values of equivalent oscillator parameters describing the n(X) dispersion, as well as the high-frequency e and low-frequency eo dielectric constants, are determined with precision. Taking into account the band structure of the above semiconductors, the values dn/dT have been calculated and show good agreement with experimental data. © 1990 Optical Society of America.