Exciton states in InxGa1-xAs/GaAs double quantum wells: Normalized reflection spectral

被引：1
|
作者：
DAndrea, A
Tomassini, N
Ferrari, L
Righini, M
Selci, S
Bruni, MR
Simeoni, G
机构：
[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY
[2] CNR,IST CHIM MAT,I-00016 ROME,ITALY
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期
关键词：
Conference proceedings; Excitons and related phenomena (including electron-hole drops); Surface and interface electron states;
D O I：
10.1007/BF02457221
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x = 9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001)GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.
引用
收藏
页码：1423 / 1427
页数：5
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