METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGH-QUALITY AND HIGHLY UNIFORM STRAINED INGAAS QUANTUM-WELLS IN A HIGH-SPEED ROTATING-DISK REACTOR

High-quality and highly uniform strained InGaAs/AlGaAs quantum-well structures have been grown successfully metalorganic chemical vapor deposition (MOCVD) using a high-speed rotating-disk reactor in which growth on three wafers of 3-inch diameter can be carried out simultaneously. By rotating the susceptor disk at a speed as high as 1000 rpm, the excellent uniformity of the quantum-well structure has been obtained. It is ascertained that the controllability of the InAs composition in InGaAs layers is high enough at a growth temperature of 675 degrees C, which is almost the same as the optimum growth temperature for AlGaAs layers. As a result, InGaAs/AlGaAs quantum-well lasers emitting at 980 nm have been obtained without changing the growth temperature. The fabricated lasers exhibit an excellent uniformity of the lasing wavelength (+/- 0.09%) and a high output power (448 mW).