OXIDATION-KINETICS OF REACTION-SINTERED SILICON-CARBIDE

被引：6
|
作者：
CHAKRABARTI, OP
MUKERJI, J
机构：
[1] Central Glass and Ceramic Research Institute, Jadavpur, Calcutta
来源：
BULLETIN OF MATERIALS SCIENCE | 1993年 / 16卷 / 04期
关键词：
OXIDATION; SILICON CARBIDE;
D O I：
10.1007/BF02746043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200-degrees to 1350-degrees-C. The material has a bulk density of 3.00 g/cm3 and the unreacted Si content is 22.5% (v/v). The activation energy for oxidation is 28.75 +/- 2.61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.
引用
收藏
页码：325 / 329
页数：5
相关论文
共 50 条
  • [41] OXIDATION OF SILICON-CARBIDE
    KEYS, LH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C253 - C253
  • [42] Study of the Structural, Physical, and Mechanical Characteristics of Reaction-Sintered Silicon Carbide Ceramics
    A. N. Belyakov
    M. A. Markov
    I. N. Kravchenko
    A. D. Bykova
    D. A. Dyuskina
    A. G. Chekuryaev
    A. D. Kashtanov
    Journal of Machinery Manufacture and Reliability, 2023, 52 : S74 - S81
  • [43] Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing
    Shen, Xinmin
    Dai, Yifan
    Deng, Hui
    Guan, Chaoliang
    Yamamura, Kazuya
    OPTICS EXPRESS, 2013, 21 (12): : 14780 - 14788
  • [44] Wear mechanism of reaction-sintered silicon carbide composites in dry friction condition
    Sang, K.-Z., 2000, Science Press (20):
  • [45] CARBON INCLUSIONS IN SINTERED SILICON-CARBIDE
    HAMMINGER, R
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (09) : 1741 - 1744
  • [46] BORON DISTRIBUTION IN SINTERED SILICON-CARBIDE
    CARTER, WD
    HOLLOWAY, PH
    WHITE, C
    CLAUSING, R
    ADVANCED CERAMIC MATERIALS, 1988, 3 (01): : 62 - 65
  • [47] Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
    Shen, Xinmin
    Tu, Qunzhang
    Deng, Hui
    Jiang, Guoliang
    He, Xiaohui
    Liu, Bin
    Yamamura, Kazuya
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (04):
  • [48] Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide
    Xinmin Shen
    Qunzhang Tu
    Hui Deng
    Guoliang Jiang
    Xiaohui He
    Bin Liu
    Kazuya Yamamura
    Applied Physics A, 2016, 122
  • [49] KINETICS MODEL FOR THE GROWTH OF SILICON-CARBIDE BY THE REACTION OF LIQUID SILICON WITH CARBON
    ZHOU, H
    SINGH, RN
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (09) : 2456 - 2462
  • [50] Effect of submicron silicon carbide powder addition on the processing and strength of reaction-sintered mullite-silicon carbide composites
    Eom, Jung-Hye
    Kim, Young-Wook
    Woo, Sang-Kuk
    Han, In-Sub
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2009, 117 (1364) : 421 - 425
12345