共 50 条
- [31] Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal-organic vapor phase epitaxy NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (3-4): : 236 - 240
- [32] Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 563 - 566
- [35] GROWTH OF SI DELTA-DOPED GAAS BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 33 (2-3): : 182 - 187
- [38] Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy Sol Energ Mater Sol Cells, 1-4 (281-288):
- [40] EFFECT OF METAL-ORGANIC COMPOSITION FLUCTUATION ON THE ATMOSPHERIC-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH OF GAALAS/GAAS AND GAINAS/INP STRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5A): : L783 - L785