LATERAL P-N-JUNCTIONS IN METAL-ORGANIC VAPOR-PHASE EPITAXY OF ALGAAS LASERS ON GAAS SUBSTRATES HAVING [011] ETCHED RIDGES

被引：3
|
作者：
WANG, TY
机构：
[1] Microdevice Lab, Polaroid Corporation, Cambridge, MA 02139
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期
关键词：
D O I：
10.1063/1.111937
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaAs lasers with a current-blocking layer have been grown on GaAs substrates having [011] etched ridges using metal-organic vapor-phase epitaxy. Conducting channels are formed over the ridges due to the diffusion of Se dopant atoms on the (311)B facets during the nonplanar growth. The formation of lateral p-n junctions at the substrate interface is evidenced by measuring the electron-beam-induced junction current from the front facet of a bonded diode. This result is useful in the single-step fabrication of laser structures with a novel current-blocking scheme.
引用
收藏
页码：1368 / 1370
页数：3
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