AUGER LIFETIMES FOR EXCITONS BOUND TO DEEP IMPURITIES IN SEMICONDUCTORS

被引：5
|
作者：
JAROS, M
RIDDOCH, FA
DALIAN, L
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 21期
关键词：
D O I：
10.1088/0022-3719/16/21/001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L733 / L739
页数：7
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