OBSERVATION OF A DISTRIBUTED EPITAXIAL OXIDE IN THERMALLY GROWN SIO2 ON SI(001)

被引：40

作者：

MUNKHOLM, A ^{[1
]}

BRENNAN, S ^{[1
]}

COMIN, F ^{[1
]}

ORTEGA, L ^{[1
]}

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.75.4254

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present direct evidence of an ordered oxide which is epitaxially related to the underlying Si(001) substrate and is distributed throughout thermally grown oxide films with thicknesses between 80 and 1000 Angstrom. This evidence consists of diffraction peaks at the [1,1,0.45] positions. For films with thickness in the range 80-160 Angstrom the integrated intensity of these diffraction peaks increases roughly linearly and the ordered oxide grain size parallel to the surface is constant at 130 Angstrom.

引用

页码：4254 / 4257

页数：4

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