OBSERVATION OF A DISTRIBUTED EPITAXIAL OXIDE IN THERMALLY GROWN SIO2 ON SI(001)

被引：40

作者：

MUNKHOLM, A ^{[1
]}

BRENNAN, S ^{[1
]}

COMIN, F ^{[1
]}

ORTEGA, L ^{[1
]}

机构：

[1] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.75.4254

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present direct evidence of an ordered oxide which is epitaxially related to the underlying Si(001) substrate and is distributed throughout thermally grown oxide films with thicknesses between 80 and 1000 Angstrom. This evidence consists of diffraction peaks at the [1,1,0.45] positions. For films with thickness in the range 80-160 Angstrom the integrated intensity of these diffraction peaks increases roughly linearly and the ordered oxide grain size parallel to the surface is constant at 130 Angstrom.

引用

页码：4254 / 4257

页数：4

共 50 条

[1] Observation of a distributed epitaxial oxide in thermally grown SiO2 on Si(001) - Comment
Shimura, T
Umeno, M
Takahashi, I
Harada, J
PHYSICAL REVIEW LETTERS, 1997, 79 (24) : 4932 - 4932
[2] Observation of a distributed epitaxial oxide in thermally grown SiO2 on Si(001) - Reply
Munkholm, A
Brennan, S
Comin, F
Ortega, L
PHYSICAL REVIEW LETTERS, 1997, 79 (24) : 4933 - 4933
[3] In situ observation of epitaxial microcrystals in thermally grown SiO2 on Si(100)
Awaji, N
Sugita, Y
Horii, Y
Takahashi, I
APPLIED PHYSICS LETTERS, 1999, 74 (18) : 2669 - 2671
[4] TUNNELING OF ELECTRONS FROM SI INTO THERMALLY GROWN SIO2
WEINBERG, ZA
SOLID-STATE ELECTRONICS, 1977, 20 (01) : 11 - 18
[5] Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
Dieker, Ch
Seo, J. W.
Guiller, A.
Sousa, M.
Locquet, J-P
Fompeyrine, J.
Panayiotatos, Y.
Sotiropoulos, A.
Argyropoulos, K.
Dimoulas, A.
MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 119 - +
[6] IDENTIFICATION OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SI
ITSUMI, M
TOMITA, M
YAMAWAKI, M
MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 39 - 42
[7] Effect of Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2
Fukatsu, S
Itoh, KM
Uematsu, M
Kageshima, H
Takahashi, Y
Shiraish, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B): : 7837 - 7842
[8] Thermally grown GeO2 on epitaxial Ge on Si(001) substrate
Casteleiro, Catarina
Halpin, John E.
Shah, Vishal A.
Myronov, Maksym
Leadley, David R.
2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 170 - 173
[9] INTRINSIC CU GETTERING AT A THERMALLY GROWN SIO2/SI INTERFACE
BAI, P
YANG, GR
LU, TM
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3313 - 3316
[10] Simulation of correlated diffusion of Si and B in thermally grown SiO2
Uematsu, M
Kageshima, H
Takahashi, Y
Fukatsu, S
Itoh, KM
Shiraishi, K
JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5513 - 5519

← 1 2 3 4 5 →