HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS

被引：106
|
作者：
GRAUL, J [1 ]
GLASL, A [1 ]
MURRMANN, H [1 ]
机构：
[1] SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 04期
关键词：
D O I：
10.1109/JSSC.1976.1050764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：491 / 495
页数：5
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