DYNAMIC-MODEL OF EPITAXIAL-GROWTH IN TERNARY III-V SEMICONDUCTOR ALLOYS

被引：11
|
作者：
GU, BL
HUANG, ZF
NI, J
机构：
[1] CHINA CTR ADV SCI & TECHNOL, WORLD LAB, CTR THEORET PHYS, BEIJING 100080, PEOPLES R CHINA
[2] TOHOKU UNIV, INST MAT RES, SENDAI, MIYAGI 980, JAPAN
来源：
PHYSICAL REVIEW B | 1995年 / 51卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.51.7104
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A concentration-wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deep layers of ternary III-V alloys. The most stable ordered structures of ternary III-V semiconductor alloys are deduced and a dynamic model for epitaxial growth is proposed. The present results are compared with the experimental observations, and the relations between interaction parameters are also given. © 1995 The American Physical Society.
引用
收藏
页码：7104 / 7111
页数：8
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