RAMAN-SCATTERING FROM ELECTRONS BOUND TO SHALLOW DONORS IN GAAS-ALXGA1-XAS QUANTUM-WELL STRUCTURES

被引：81
|
作者：
SHANABROOK, BV [1 ]
COMAS, J [1 ]
PERRY, TA [1 ]
MERLIN, R [1 ]
机构：
[1] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.29.7096
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7096 / 7098
页数：3
相关论文
共 50 条
  • [41] RAMAN-SCATTERING STUDIES OF LO PHONONS IN GAAS/ALXGA1-XAS SUPERLATTICES
    WANG, ZP
    HAN, HX
    LI, GH
    PHYSICAL REVIEW B, 1990, 42 (15): : 9693 - 9696
  • [42] SPIN-FLIP RAMAN-SCATTERING IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS
    SAPEGA, VF
    CARDONA, M
    PLOOG, K
    IVCHENKO, EL
    MIRLIN, DN
    PHYSICAL REVIEW B, 1992, 45 (08): : 4320 - 4326
  • [43] PHONON COUPLING IN GAAS/ALXGA1-XAS OBSERVED BY PICOSECOND RAMAN-SCATTERING
    BOUCHALKHA, A
    KIM, DS
    JACOB, JM
    ZHOU, JF
    SONG, JJ
    KLEM, JF
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B167 - B169
  • [44] CARRIER DENSITY DISTRIBUTION IN MODULATION DOPED GAAS-ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURES
    HSIEH, TC
    HESS, K
    COLEMAN, JJ
    DAPKUS, PD
    SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1173 - 1176
  • [45] OBSERVATION OF GAAS-ALXGA1-XAS HETEROSTRUCTURES AND QUANTUM-WELL-WIRE STRUCTURES USING BACKSCATTERED ELECTRON IMAGE
    HIRAYAMA, Y
    OKAMOTO, H
    JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1989, 12 (01): : 60 - 64
  • [46] RESONANT RAMAN-SCATTERING DUE TO BOUND-CARRIER SPIN-FLIP IN GAAS ALXGA1-XAS QUANTUM-WELLS
    SAPEGA, VF
    RUF, T
    CARDONA, M
    PLOOG, K
    IVCHENKO, EL
    MIRLIN, DN
    PHYSICAL REVIEW B, 1994, 50 (04): : 2510 - 2519
  • [47] Interband transitions in AlxGa1-xAs/AlAs quantum-well structures
    Lee, ST
    Haetty, J
    Petrou, A
    Hawrylak, P
    Dutta, M
    Pamulapati, J
    Newman, PG
    TaysingLara, M
    PHYSICAL REVIEW B, 1996, 53 (19): : 12912 - 12916
  • [48] RAMAN-SCATTERING STUDIES OF DONOR TRANSITIONS IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES
    PERRY, TA
    MERLIN, R
    SHANABROOK, BV
    COMAS, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 636 - 638
  • [49] LOCALIZATION OF 2D ELECTRONS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES
    PAALANEN, MA
    TSUI, DC
    LIN, BJ
    GOSSARD, AC
    SURFACE SCIENCE, 1984, 142 (1-3) : 29 - 36
  • [50] RAMAN-SCATTERING DEPTH PROFILE OF MBE GROWN ALXGA1-XAS/GAAS AND GAAS/SI
    IIZUKA, K
    SUZUKI, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 295 - 298
12345