ELECTRONIC EFFECTS AT CERAMIC GRAIN-BOUNDARIES

被引：0

作者：

PIKE, GE ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

AMERICAN CERAMIC SOCIETY BULLETIN | 1985年 / 64卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1347 / 1347

页数：1

共 50 条

[41] QUASICRYSTALS AT GRAIN-BOUNDARIES
RIVIER, N
LAWRENCE, AJA
PHYSICA B & C, 1988, 150 (1-2): : 190 - 202
[42] GRAIN-BOUNDARIES IN RECRYSTALLIZATION
CAHN, RW
CANADIAN METALLURGICAL QUARTERLY, 1974, 13 (01) : 253 - 260
[43] USUAL GRAIN-BOUNDARIES
FIONOVA, LK
FIZIKA METALLOV I METALLOVEDENIE, 1992, (04): : 8 - 13
[44] GRAIN-BOUNDARIES REVISITED
MARCINKOWSKI, MJ
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (02): : 425 - 434
[45] ELECTRONIC-PROPERTIES OF GALLIUM-ARSENIDE WITH GRAIN-BOUNDARIES
VAKULENKO, OV
DRANENKO, AS
NOVIKOV, NN
SKRYSHEVSKY, VA
UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (03): : 452 - 453
[46] ELECTRONIC-STRUCTURE AND PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
SEAGER, CH
PIKE, GE
GINLEY, DS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C112 - C112
[47] MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON
SUTTON, AP
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 13 - 24
[48] The influence of grain-boundaries on the electronic performance of CVD diamond films
Trucchi, DM
Cappelli, E
Conte, G
Mattei, G
Gramaccioni, C
Ascarelli, P
DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 575 - 579
[49] MODELS OF THE ATOMIC AND ELECTRONIC-STRUCTURES OF GRAIN-BOUNDARIES IN SILICON
SUTTON, AP
STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 13 - 24
[50] THE EFFECT OF THE ELECTRONIC-STRUCTURE ON THE BEHAVIOR OF GRAIN-BOUNDARIES IN METALS
MAURER, R
GLEITER, H
SCRIPTA METALLURGICA, 1985, 19 (08): : 1009 - 1012

← 1 2 3 4 5 →