INGAAS/INP HETEROBIPOLAR TRANSISTORS FOR INTEGRATION ON SEMI-INSULATING INP SUBSTRATES

被引：6
|
作者：
DAMBKES, H [1 ]
KONIG, U [1 ]
SCHWADERER, B [1 ]
机构：
[1] ANT NACHRICHTENTECH GMBH,GRUNDLAGENENTWICKLUNG,D-7150 BACKNANG,FED REP GER
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 23期
关键词：
D O I：
10.1049/el:19840650
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：955 / 957
页数：3
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