New Method for Quality Evaluation of Mc-Si Wafers Implied in the Fabrication of Photovoltaic Cells

被引：0

作者：

Fathi, Mohamed ^{[1
]}

Chikouche, Ahmed ^{[1
]}

机构：

[1] UDES, Solar Equipments Dev Unit, Route Natl N11,Bouismail,BP 386, Tipasa 42415, Algeria

来源：

JORDAN JOURNAL OF MECHANICAL AND INDUSTRIAL ENGINEERING | 2010年 / 4卷 / 01期

关键词：

Multicrystalline Silicon Wafers; Crystalline Defect Density; Four Probes Technique; Chemical Delineation; Photovoltaic;

D O I：

暂无

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

We have developed a new method for quality evaluation of mc-Si wafers implied in the fabrication of photovoltaic cells. This method is based on the exploitation of the variation of the sheet resistance (Delta R square) of chemically etched wafers. We have presented specific classification connecting directly Delta R square bands to the crystalline defect types and densities. These results are in good accordance to physically observed defect density and grain boundaries repartition. Previously, with special process experimentation, we have shown that the best sensitivity to crystalline extended defects in mc-Si material is supported by the "Secco Etch" chemical solution. This chemical is very sensitive to crystalline defects and was applied to the development of our new characterization method of mc-Si wafers. (C) 2010 Jordan Journal of Mechanical and Industrial Engineering. All rights reserved

引用

页码：151 / 154

页数：4

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