STRUCTURE AND PERFECTION OF THERMALLY-GROWN OXIDE FILMS ON SILICON

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作者：
STICKLER, R
KNOPP, AN
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 07期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C148 / &
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