Effect of As overpressure on Si-doped (111)A, (211)A and (311)A GaAs grown by molecular beam epitaxy

被引：16
|
作者：
Johnston, D [1 ]
Pavesi, L [1 ]
Henini, M [1 ]
机构：
[1] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY
来源：
MICROELECTRONICS JOURNAL | 1995年 / 26卷 / 08期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/0026-2692(95)00034-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si-doped (111)A, (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) at different As over-pressures have been studied. Hall effect measurements have revealed that the doping changes from p- to n-type when the As pressure is increased. The transition As pressure is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that, when the As pressure is increased, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the orientation dependence of the surface bonding and the kinetics of the MBE growth process.
引用
收藏
页码：759 / 765
页数：7
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