共 50 条
- [42] INFLUENCE OF THE PARAMETERS OF PULSED ELECTRON-IRRADIATION ON THE EFFICIENCY OF FORMATION OF DEFECTS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (12): : 1375 - 1376
- [43] CHEMICAL DEFECTS INDUCED IN P(VDF-TRFE) BY ELECTRON-IRRADIATION RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 118 (02): : 117 - 124
- [46] INFLUENCE OF THE INTENSITY OF ELECTRON-IRRADIATION ON THE FORMATION OF DEFECTS IN INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1277 - 1280
- [47] Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2023, 17 : 397 - 400
- [48] GROWTH AND STRUCTURE OF WO2.72 CRYSTALS PRODUCED BY ELECTRON-IRRADIATION JOURNAL OF ELECTRON MICROSCOPY, 1979, 28 (03): : 243 - 243
- [49] STUDY OF POINT-DEFECTS PRODUCED IN ALUMINUM BY QUENCHING AND IRRADIATION WITH ELECTRONS MEMOIRES SCIENTIFIQUES DE LA REVUE DE METALLURGIE, 1972, 69 (04): : 277 - &
- [50] Donor centers in zinc germanium diphosphide produced by electron irradiation PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235 (01): : 151 - 154