PHOTO CVD SYSTEM FOR SILICON-NITRIDE FILM

被引：8
|
作者：
NUMASAWA, Y
YAMAZAKI, K
HAMANO, K
机构：
[1] NEC, VLSI Development Div,, Sagamihara, Jpn, NEC, VLSI Development Div, Sagamihara, Jpn
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 01期
关键词：
FILMS - Growing - ULTRAVIOLET RADIATION;
D O I：
10.1007/BF02649946
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This report presents a photo CVD system for silicon nitride film deposition which is improved with respect to the wall deposition problem and which does not use mercury vapor sensitizer. This paper describes the concept of the photo CVD system improvement, an improved photo-CVD system, silicon nitride film depositions, and the chemical and electrical properties of the deposited films.
引用
收藏
页码：27 / 30
页数：4
相关论文
共 50 条
  • [21] Thermal annealing effect of silicon nitride film deposited by photo-CVD
    Deguchi, Y
    Ohnishi, M
    Takahashi, Y
    Ohnishi, K
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1997, 80 (11): : 30 - 38
  • [22] Thermal annealing effect of silicon nitride film deposited by photo-CVD
    Deguchi, Yasushi
    Ohnishi, Michio
    Takahashi, Yoshihiro
    Ohnishi, Kazunori
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1997, 80 (11): : 30 - 38
  • [23] CVD SILICON-NITRIDE COATING OF CEMENTED CARBIDE INSERTS
    ELKADDAH, N
    CHEN, C
    JOURNAL OF METALS, 1988, 40 (07): : A33 - A33
  • [24] ORIGIN AND CHARACTERISTICS OF TRAP STATES IN CVD SILICON-NITRIDE
    FUJITA, S
    SASAKI, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C79 - C79
  • [25] SINTERING AND MICROSTRUCTURE OF SILICON-NITRIDE PREPARED BY PLASMA CVD
    MORIYOSHI, Y
    FUTAKI, M
    EKINAGA, N
    NAKATA, T
    JOURNAL OF MATERIALS SCIENCE, 1992, 27 (16) : 4477 - 4482
  • [26] TRIBOLOGY OF SILICON-NITRIDE SILICON-NITRIDE AND SILICON-NITRIDE STEEL SLIDING PAIRS
    SUTOR, PA
    AMERICAN CERAMIC SOCIETY BULLETIN, 1983, 62 (11): : 1246 - 1246
  • [27] PHOTO-CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILM BY DIRECT PHOTOLYSIS
    NUMASAWA, Y
    YAMAZAKI, K
    HAMANO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L792 - L794
  • [28] CVD OF SILICON-CARBIDE AND SILICON-NITRIDE ON TOOLS FOR ELECTROCHEMICAL MACHINING
    VERSPUI, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C353 - C353
  • [29] PHOTO-CVD SILICON-NITRIDE THIN-LAYERS AS PH-ISFET SENSITIVE MEMBRANE
    ROCHER, V
    POYARD, S
    JAFFREZICRENAULT, N
    AJOUX, C
    LEMITI, M
    SIBAI, A
    SENSORS AND ACTUATORS B-CHEMICAL, 1994, 19 (1-3) : 342 - 347
  • [30] EXOELECTRONIC EMISSION OF THE LAYERED SYSTEM - SILICON-NITRIDE THIN RESISTIVE FILM
    SAGALOVICH, GL
    DEKHTYAR, YD
    OZOLS, KK
    APELS, AY
    ZHURNAL TEKHNICHESKOI FIZIKI, 1983, 53 (06): : 1195 - 1196
12345