HYDROGEN IMPLANTATION IN SILICON BETWEEN 1.5 AND 60 KEV

被引：86
作者：
LIGEON, E [1 ]
GUIVARCH, A [1 ]
机构：
[1] CEN,DEPT RECH FONDAMENTALE,SECT PHYS SOLIDE,BP 85,CTR TRI,38041 GRENOBLE,FRANCE
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 27卷 / 3-4期
关键词：
D O I：
10.1080/00337577608243025
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：129 / 137
页数：9
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