LATTICE-RELAXATION IN ALUMINUM MONOLAYERS

被引:20
作者
BATRA, IP
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573143
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1603 / 1606
页数:4
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共 53 条
[31]   CALCULATION OF HIGH-PRESSURE PHASES OF AL [J].
LAM, PK ;
COHEN, ML .
PHYSICAL REVIEW B, 1983, 27 (10) :5986-5991
[32]   MORPHOLOGICAL AND CHEMICAL CONSIDERATIONS FOR THE EPITAXY OF METALS ON SEMICONDUCTORS [J].
LUDEKE, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :400-406
[33]   ABINITIO CALCULATION OF INTER-ATOMIC POTENTIALS AND ELECTRONIC-PROPERTIES OF A SIMPLE METAL-AL [J].
MANNINEN, M ;
JENA, P ;
NIEMINEN, RM ;
LEE, JK .
PHYSICAL REVIEW B, 1981, 24 (12) :7057-7070
[34]   EPITAXIAL RELATIONSHIPS BETWEEN AL, AG AND GAAS(001) SURFACES [J].
MASSIES, J ;
LINH, NT .
SURFACE SCIENCE, 1982, 114 (01) :147-160
[35]  
Matthews J.W, 1975, EPITAXIAL GROWTH
[36]  
MATTHEWS JW, 1975, EPITAXIAL GROWTH B
[37]  
MORUZZI VL, 1978, CALCULATED ELECTRONI
[38]  
NIEDERMEYER R, 1968, THIN FILMS, V1, P25
[39]   LEVEL ORDERING OF STATES IN A CU (001) MONOLAYER [J].
PAINTER, GS .
PHYSICAL REVIEW B, 1978, 18 (02) :955-957
[40]   BONDING IN A CU (001) MONOLAYER [J].
PAINTER, GS .
PHYSICAL REVIEW B, 1978, 17 (10) :3848-3852