LATTICE-RELAXATION IN ALUMINUM MONOLAYERS

被引:20
作者
BATRA, IP
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573143
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1603 / 1606
页数:4
相关论文
共 53 条
[1]   SELF-CONSISTENT ELECTRONIC-STRUCTURE OF A CU(100) MONOLAYER [J].
ARLINGHAUS, FJ ;
GAY, JG ;
SMITH, JR .
PHYSICAL REVIEW B, 1979, 20 (04) :1332-1334
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]   ON BONDING AND STRUCTURE OF EPITAXIAL BICRYSTALS .1. SEMI-INFINITE CRYSTALS [J].
BALL, CAB ;
VANDERME.JH .
PHYSICA STATUS SOLIDI, 1970, 38 (01) :335-&
[4]   IDEAL AL-GE(001) INTERFACE - FROM CHEMISORPTION TO METALLIZATION OF THE AL OVERLAYER [J].
BATRA, IP ;
CIRACI, S .
PHYSICAL REVIEW B, 1984, 29 (12) :6419-6424
[5]   A THEORETICAL-STUDY OF THE EPITAXIAL-GROWTH OF METAL OVERLAYERS ON SEMICONDUCTOR SURFACES [J].
BATRA, IP ;
CIRACI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :427-432
[6]   ELECTRONIC-STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
BATRA, IP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :558-563
[7]   ELECTRONIC STATES OF IDEAL GE-AL INTERFACES [J].
BATRA, IP ;
HERMAN, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1080-1084
[8]   1ST-PRINCIPLES CALCULATION OF ENERGY OF AN EPITAXIAL SYSTEM [J].
BATRA, IP .
PHYSICAL REVIEW B, 1984, 29 (12) :7108-7110
[9]  
BATRA IP, 1981, B AM PHYS SOC, V26, P206
[10]  
BATRA IP, 1985, J VAC SCI TECHNOL B, V3