HETEROJUNCTION DIODES OF (ALGA)AS-GAAS WITH IMPROVED DEGRADATION RESISTANCE

被引：17

作者：

ETTENBERG, M ^{[1
]}

KRESSEL, H ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 08期

关键词：

D O I：

10.1063/1.88217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：478 / 480

页数：3

共 11 条

[1] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].

ETTENBERG, M ;

KRESSEL, H ;

GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831

[2] DEGRADATION OF ALXGA1-X AS HETEROJUNCTION ELECTROLUMINESCENT DEVICES [J].

ETTENBERG, M ;

KRESSEL, H ;

LOCKWOOD, HF .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :82-85

[3]

Ettenberg M., 1973, 1973 International Electron Devices Meeting Technical Digest, P317, DOI 10.1109/IEDM.1973.188718

[4] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION [J].

KRESSEL, H ;

BYER, NE ;

LOCKWOOD, H ;

HAWRYLO, FZ ;

NELSON, H ;

ABRAHAMS, MS ;

MCFARLAN.SH .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :635-&

[5]

KRESSEL H, 1974, J PHYS-PARIS, V35, P223

[6] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

[7]

Mettler K., 1972, SIEMENS FORSCH ENTW, V1, P274

[8]

NEWMAN DH, 1972, IEEE J QUANTUM ELECT, VQE 8, P379

[9] NATURE OF OPTICALLY INDUCED DEFECTS IN GA1-XALXAS-GAAS DOUBLE-HETEROJUNCTION LASER STRUCTURES [J].

PETROFF, P ;

JOHNSTON, WD ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :226-228

[10] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

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