DEGRADATION OF ALXGA1-X AS HETEROJUNCTION ELECTROLUMINESCENT DEVICES

被引：30

作者：

ETTENBERG, M ^{[1
]}

KRESSEL, H ^{[1
]}

LOCKWOOD, HF ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1063/1.1655290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：82 / 85

页数：4

共 12 条

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[2]

Ettenberg M., 1973, 1973 International Electron Devices Meeting Technical Digest, P317, DOI 10.1109/IEDM.1973.188718

[3] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].

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HWANG, CJ ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183

[4] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES [J].

KECK, DB ;

MAURER, RD ;

SCHULTZ, PC .

APPLIED PHYSICS LETTERS, 1973, 22 (07) :307-309

[5] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION [J].

KRESSEL, H ;

BYER, NE ;

LOCKWOOD, H ;

HAWRYLO, FZ ;

NELSON, H ;

ABRAHAMS, MS ;

MCFARLAN.SH .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :635-&

[6] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

BYER, NE .

PROCEEDINGS OF THE IEEE, 1969, 57 (01) :25-&

[7]

NAKADA O, 1973, P INT C SOLID STATE

[8] IMPROVED RED AND INFRARED LIGHT EMITTING ALCHIGA1-CHIAS LASER DIODES USING CLOSE-CONFINEMENT STRUCTURE [J].

NELSON, H ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1969, 15 (01) :7-&

[9] EXPERIMENTAL TESTS OF PROPOSED MECHANISMS FOR GRADUAL DEGRADATION OFF GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

NEWMAN, DH ;

OHARA, S ;

RITCHIE, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (03) :379-&

[10] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

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