INTERLAYER POTENTIAL IN 2H-MOS2

被引：3
|
作者：
GHOSH, PN
MAITI, CR
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.29.4757
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4757 / 4761
页数：5
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