DIFFUSION OF CD IN INP AND IN0.53GA0.47AS

被引：12
|
作者：
AYTAC, S
SCHLACHETZKI, A
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期
关键词：
D O I：
10.1016/0022-0248(83)90265-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：169 / 173
页数：5
相关论文
共 50 条
  • [21] INVESTIGATION OF MOLECULAR-BEAM EPITAXIAL IN0.53GA0.47AS REGROWN ON LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS/INP
    NASHIMOTO, Y
    DHAR, S
    HONG, WP
    CHIN, A
    BERGER, P
    BHATTACHARYA, PK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 540 - 542
  • [22] IN0.53GA0.47AS/INP FLOATING GUARD RING AVALANCHE PHOTODIODES FABRICATED BY DOUBLE DIFFUSION
    ACKLEY, DE
    HLADKY, J
    LANGE, MJ
    MASON, S
    ERICKSON, G
    OLSEN, GH
    BAN, VS
    LIU, Y
    FORREST, SR
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) : 571 - 573
  • [23] Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices
    Hanamoto, LK
    Henriques, AB
    Tribuzy, CVB
    Souza, PL
    Yavich, B
    Abramof, E
    BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 334 - 337
  • [24] Response and Electrical Characteristics of In0.53Ga0.47As/InP Avalanche Photodiode
    Yuan Zheng-bing
    Xiao Qing-quan
    Yang Wen-xian
    Xiao Meng
    Wu Yuan-yuan
    Tan Ming
    Dai Pan
    Li Xue-fei
    Xie Quan
    Lu Shu-long
    ACTA PHOTONICA SINICA, 2018, 47 (03)
  • [25] IN0.53GA0.47AS INP HETEROJUNCTIONS WITH LOW INTERFACE DEFECT DENSITIES
    LEE, CD
    FORREST, SR
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 342 - 351
  • [26] Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
    Alian, Alireza
    Brammertz, Guy
    Merckling, Clement
    Firrincieli, Andrea
    Wang, Wei-E
    Lin, H. C.
    Caymax, Matty
    Meuris, Marc
    De Meyer, Kristin
    Heyns, Marc
    APPLIED PHYSICS LETTERS, 2011, 99 (11)
  • [27] Sensitive In0.53Ga0.47As/InP (SI) magnetic field sensors
    Przeslawski, T
    Wolkenberg, A
    Reginski, K
    Kaniewski, J
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 242 - 246
  • [28] Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells
    Patricio, M. A. Tito
    Tavares, B. G. M.
    Jacobsen, J. M.
    Teodoro, M. D.
    LaPierre, R. R.
    Pusep, Yu. A.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 131
  • [29] SELECTIVE LPE-GROWTH OF IN0.53GA0.47AS ON SEMIINSULATING INP
    SCHILLING, M
    SCHEMMEL, G
    TEGUDE, FJ
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 259 - 262
  • [30] PHOTOLUMINESCENCE AND LASER-EMISSION IN IN0.53GA0.47AS/INP LAYERS
    KULYUK, LL
    RADAUTSAN, SI
    RUSSU, EV
    SIMINEL, AV
    SMIRNOV, VG
    STRUMBAN, EE
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (01): : 289 - 293
12345