AMBIENT PRESSURE SCANNING TUNNELING MICROSCOPE IMAGING OF HYDROGEN-PASSIVATED SI/GE MULTILAYERS

被引：8
|
作者：
PINNINGTON, T
SANDERSON, A
TIEDJE, T
PEARSALL, TP
KASPER, E
PRESTING, H
机构：
[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1Z1,BC,CANADA
[2] UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195
[3] DAIMLER BENZ AG,RES,W-7000 ULM,GERMANY
来源：
THIN SOLID FILMS | 1992年 / 222卷 / 1-2期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1016/0040-6090(92)90081-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In an attempt to observe the band offset and atomic structure of the Si-Ge interface directly we have imaged cross-sections of Si/Ge multilayer structures with scanning tunneling microscopy (STM). The samples were imaged in a nitrogen ambient and consisted of cleaved cross-sections that had been passivated with hydrogen by etching in a NH4F solution. The multilayers were observed by STM, although not with atomic resolution. The conductivity type of the doped layers was determined as a function of position in the cross-section from current-voltage measurements.
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页码：259 / 264
页数：6
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