EVIDENCE FOR ROOM-TEMPERATURE TUNNELING RECOMBINATION IN AMORPHOUS-SILICON

被引:4
|
作者
DERSCH, H
AMER, NM
机构
关键词
D O I
10.1016/0022-3093(85)90733-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:615 / 618
页数:4
相关论文
共 50 条
  • [21] DISTRIBUTION OF RECOMBINATION LIFETIMES IN AMORPHOUS-SILICON
    STREET, RA
    BIEGELSEN, DK
    SOLID STATE COMMUNICATIONS, 1982, 44 (04) : 501 - 505
  • [22] RADIATIVE RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
    PANKOVE, JI
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (03) : 355 - 364
  • [23] ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON
    ESSER, A
    SEIBERT, K
    KURZ, H
    PARSONS, GN
    WANG, C
    DAVIDSON, BN
    LUCOVSKY, G
    NEMANICH, RJ
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 573 - 575
  • [24] ULTRAFAST RECOMBINATION AND TRAPPING IN AMORPHOUS-SILICON
    ESSER, A
    SEIBERT, K
    KURZ, H
    PARSONS, GN
    WANG, C
    DAVIDSON, BN
    LUCOVSKY, G
    NEMANICH, RJ
    PHYSICAL REVIEW B, 1990, 41 (05): : 2879 - 2884
  • [25] OBSERVATION OF STABLE ROOM-TEMPERATURE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON FOLLOWING LONG-TERM LIGHT SOAKING
    XI, J
    MACNEIL, J
    LIU, T
    GHOSH, M
    APPLIED PHYSICS LETTERS, 1992, 60 (16) : 1975 - 1977
  • [26] EVIDENCE FOR VACANCIES IN AMORPHOUS-SILICON
    VANDENHOVEN, GN
    LIANG, ZN
    NIESEN, L
    CUSTER, JS
    PHYSICAL REVIEW LETTERS, 1992, 68 (25) : 3714 - 3717
  • [27] TUNNELING EFFECTIVE MASS IN HYDROGENATED AMORPHOUS-SILICON
    SHANNON, JM
    NIEUWESTEEG, KJBM
    APPLIED PHYSICS LETTERS, 1993, 62 (15) : 1815 - 1817
  • [28] MODELING A TUNNELING STATE IN AMORPHOUS-SILICON DIOXIDE
    GUTTMAN, L
    RAHMAN, SM
    PHYSICAL REVIEW B, 1986, 33 (02): : 1506 - 1508
  • [29] SPIN PHYSICS OF RECOMBINATION CENTERS IN AMORPHOUS-SILICON
    SOLOMON, I
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 625 - 631
  • [30] DEEP TRAPPING AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
    ZHOU, JH
    ELLIOTT, SR
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (02): : 147 - 157