SPECTRAL GAIN MEASUREMENTS FOR SEMICONDUCTOR-LASER DIODES

被引：11
|
作者：
CHO, LALS
SMOWTON, PM
THOMAS, B
机构：
来源：
IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 01期
关键词：
D O I：
10.1049/ip-j.1990.0013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical values.
引用
收藏
页码：64 / 68
页数：5
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