INFLUENCE OF HOT CARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN 1.3-MU-M INGAASP LASERS

被引:14
|
作者
ETIENNE, B [1 ]
SHAH, J [1 ]
LEHENY, RF [1 ]
NAHORY, RE [1 ]
机构
[1] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.93395
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1018 / 1020
页数:3
相关论文
共 50 条
  • [41] OPTICAL-PROPERTIES OF A 1.3-MU-M INGAASP SUPERLUMINESCENT DIODE
    DUTTA, NK
    NELSON, RJ
    WRIGHT, PD
    BESOMI, P
    WILSON, RB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 360 - 363
  • [42] INTEGRATION OF 1.3-MU-M WAVELENGTH LASERS AND OPTICAL AMPLIFIERS
    KOREN, U
    MILLER, BI
    RAYBON, G
    ORON, M
    YOUNG, MG
    KOCH, TL
    DEMIGUEL, JL
    CHIEN, M
    TELL, B
    BROWNGOEBELER, K
    BURRUS, CA
    APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1375 - 1377
  • [43] 1.3-MU-M INGAASP CONTINUOUS-WAVE LASERS VAPOR GROWN ON (311) AND (511) INP SUBSTRATES
    OLSEN, GH
    ZAMEROWSKI, TJ
    DIGIUSEPPE, NJ
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3598 - 3599
  • [44] SUPERMODE INGAASP SC DHS LASERS WITH THIN WAVE-GUIDE (LAMBDA=0.8 AND 1.3-MU-M)
    BERISHEV, IE
    BORODITSKII, ML
    GORBACHEV, AY
    ILIN, YV
    ILINSKAYA, ND
    LIVSHITS, DA
    STANKEVICH, AL
    RAFAILOV, EU
    TARASOV, IS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1994, 20 (07): : 41 - 46
  • [45] HIGH-OUTPUT POWER INGAASP (LAMBDA=1.3-MU-M) STRIP-BURIED HETEROSTRUCTURE LASERS
    NELSON, RJ
    WRIGHT, PD
    BARNES, PA
    BROWN, RL
    CELLA, T
    SOBERS, RG
    APPLIED PHYSICS LETTERS, 1980, 36 (05) : 358 - 360
  • [46] HIGH-SPEED 1.3-MU-M INGAASP FABRY-PEROT LASERS FOR DIGITAL AND ANALOG APPLICATIONS
    CHENG, WH
    MAR, A
    BOWERS, JE
    HUANG, RT
    SU, CB
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1660 - 1667
  • [47] COMBINED HIGH-POWER AND HIGH-FREQUENCY OPERATION OF INGAASP INP LASERS AT 1.3-MU-M
    CHEN, TR
    ZHUANG, YH
    YARIV, A
    BLAUVELT, H
    BARCHAIM, N
    ELECTRONICS LETTERS, 1990, 26 (14) : 985 - 987
  • [48] VAPOR-PHASE GROWTH OF 1.3-MU-M INGAASP-INP HETEROJUNCTION LASERS, LEDS, AND APDS
    OLSEN, GH
    ETTENBERG, M
    NUESE, CJ
    KRESSEL, H
    BOTEZ, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1843 - 1843
  • [49] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS
    DUTTA, NK
    NELSON, RJ
    BARNES, PA
    ELECTRONICS LETTERS, 1980, 16 (17) : 653 - 654
  • [50] OPTIMUM DESIGNS FOR INGAASP/INP (LAMBDA=1.3-MU-M) PLANOCONVEX WAVEGUIDE LASERS UNDER LASING CONDITIONS
    UENO, M
    LANG, R
    MATSUMOTO, S
    KAWANO, H
    FURUSE, T
    SAKUMA, I
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06): : 218 - 228