SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS

被引：10
|
作者：
ASAI, H
SUGIURA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 10期
关键词：
D O I：
10.1143/JJAP.24.L815
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L815 / L817
页数：3
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