THE ODD VOIGT EFFECT UNDER A STRONG ELECTRIC-FIELD IN SEMICONDUCTORS

被引：0
|
作者：
NGUYEN, HS
机构：
[1] VIETNAM NATL ATOM ENERGY INST,THEORET PHYS LAB,HANOI,VIETNAM
[2] UN,EDUC SCI & CULTURAL ORG,INT CTR THEORET PHYS,TRIESTE,ITALY
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 170卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The high-frequency conductivity tensor sigma(ik)(omega)) in the linear approximation of magnetic field H and in quadratic approximation of external dc electric field is derived by solving the Boltzmann equation. The magneto-optical phenomena in the Voigt configuration (when the probe electromagnetic wave propagates across the magnetic field) are investigated. It is shown that birefringence and dichroism have a component that is odd (linear) in the magnetic field and predominates over the even effect in weak magnetic field.
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页码：323 / 329
页数：7
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