The study of GaAs/InGaAs delta-doping resonant interband tunneling diode

The delta-doping InGaAs/GaAs quantum well resonant interband tunneling diode by low pressure metal organic chemical vapor deposition has been successfully grown. The full width at half maximum of the doping profile analyzed by capacitance-voltage measurement is small. Two kinds of delta-doping resonant interband tunneling diodes were simulated in this' study. One was the delta n(+)-i-delta p(+) resonant interband tunneling structure and the other was the delta n(+)-i-delta p(+)-i-delta n(+) single barrier resonant interband tunneling structure. The simulated current-voltage characteristics exhibited the expected N-shaped negative differential resistance. The calculated peak-to-valley current ratio (PVCR) values of delta n(+)-i-delta p(+) and delta n(+)-i-delta p(+)-i-delta n(+) structures are 6 and 5.6, respectively. The calculated PVCR value is larger than experimental PVCR values for the delta n(+)-i-delta p(+) structure. The PVCR values of this study are better than the published data of other authors.