GROWTH OF HIGH-QUALITY MICROCRYSTALLINE SILICON BY LAYER-BY-LAYER DEPOSITION TECHNIQUE

被引：1
|
作者：
PARK, KC
KIM, SK
PARK, M
JUN, JM
LEE, KH
JANG, J
机构：
[1] Department of Physics, Kyung Hee University, Seoul, 130-701, Dongdaemun-ku
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期
关键词：
D O I：
10.1016/0927-0248(94)90079-5
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We have studied the growth of microcrystalline silicon (mu c-Si) films with SiH4 or SiH4/SiF4 by the layer-by-layer deposition technique, where the deposition and hydrogen radical exposure (HRE) are done alternatively. With increasing the HRE time, the crystalline volume fraction increases and the hydrogen content decreases. A mechanism for enhancement of crystallinity by the HRE treatment is proposed.
引用
收藏
页码：509 / 515
页数：7
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