NEW APPROACH TO ELECTRON-BEAM LITHOGRAPHY

被引：17

作者：

FULTON, TA

DOLAN, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 08期

关键词：

D O I：

10.1063/1.94050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：752 / 754

页数：3

共 50 条

[21] ELECTRON-BEAM ARRAY LITHOGRAPHY
SMITH, DO
HARTE, KJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 953 - 957
[22] INSTRUMENTATION FOR ELECTRON-BEAM LITHOGRAPHY
CHANG, THP
IEEE TRANSACTIONS ON MAGNETICS, 1974, MA10 (03) : 883 - 887
[23] RESISTS FOR ELECTRON-BEAM LITHOGRAPHY
TAMAMURA, T
IMAMURA, S
SUGAWARA, S
ACS SYMPOSIUM SERIES, 1984, 242 : 103 - 118
[24] LSI AND ELECTRON-BEAM LITHOGRAPHY
LIVESAY, WR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C86 - C86
[25] ELECTRON-BEAM LITHOGRAPHY SYSTEM WITH NEW CORRECTION TECHNIQUES
TAKAHASHI, Y
YAMADA, A
OAE, Y
YASUDA, H
KAWASHIMA, K
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[26] FAST ELECTRON-BEAM LITHOGRAPHY
EIDSON, JC
IEEE SPECTRUM, 1981, 18 (07) : 24 - 28
[27] NEW TECHNIQUE FOR COMPUTATION AND CHALLENGES FOR ELECTRON-BEAM LITHOGRAPHY
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[28] A NEW CONTRAST ENHANCEMENT TECHNIQUE FOR ELECTRON-BEAM LITHOGRAPHY
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AOKI, E
OKAZAKI, S
MURAI, F
SHIRAISHI, H
NONOGAKI, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 366 - 369
[29] ELECTRON-BEAM LITHOGRAPHY IN TELECOMMUNICATIONS DEVICE FABRICATION .1. ELECTRON-BEAM LITHOGRAPHY MACHINES
JONES, ME
DIX, C
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[30] NEW CHEMICALLY AMPLIFIED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY
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ENDO, M
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