FAST AND SLOW PROCESSES IN LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN HYDROGENATED AMORPHOUS SI-N FILMS

被引：7

作者：

KUMEDA, M ^{[1
]}

SUGIMOTO, A ^{[1
]}

ZHANG, JY ^{[1
]}

OZAWA, Y ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV, FAC TECHNOL, DEPT ELECTR, KANAZAWA, ISHIKAWA 920, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8A期

关键词：

LIGHT-INDUCED ESR; SI-N ALLOY FILMS; DANGLING BONDS; CHARGE TRAPPING; BOND BREAKING;

D O I：

10.1143/JJAP.32.L1046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detailed light-induced Electron Spin Resonance (ESR) measurements are performed at room temperature and liquid nitrogen temperature for hydrogenated amorphous silicon alloyed with various amounts of nitrogen. The increase in the ESR signal intensity with increasing illumination time can be described in terms of a fast increase and a slow increase. The fast-increase component decays faster after ceasing illumination than the slow-increase component. The origins of the two components are discussed.

引用

页码：L1046 / L1048

页数：3

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