FORMATION OF GAAS RIDGE QUANTUM-WIRE STRUCTURES BY MOLECULAR-BEAM EPITAXY ON PATTERNED SUBSTRATES

被引：154
|
作者：
KOSHIBA, S
NOGE, H
AKIYAMA, H
INOSHITA, T
NAKAMURA, Y
SHIMIZU, A
NAGAMUNE, Y
TSUCHIYA, M
KANO, H
SAKAKI, H
WADA, K
机构：
[1] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, MEGURO KU, TOKYO 153, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期
关键词：
D O I：
10.1063/1.111967
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A ridge quantum wire structure has been successfully fabricated on a patterned (001) GaAs substrate by first growing a (111)B facet structure with a very sharp ridge and then depositing a thin GaAs quantum well on its top. Electron microscope study has shown that a GaAs wire with the effective lateral width of 17-18 nm is formed at the ridge top. Photoluminescence and cathodoluminescence measurements indicate that one of the luminescence lines comes from the wire region at the ridge and its blue shift (approximately 60 meV) agrees with the quantum confined energy calculated for the observed wire structure.
引用
收藏
页码：363 / 365
页数：3
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