DECAY TIMES OF EXCITONS IN LATTICE-MATCHED INGAAS/INP SINGLE QUANTUM-WELLS

被引：8
|
作者：
BRENER, I [1 ]
GERSHONI, D [1 ]
RITTER, D [1 ]
PANISH, MB [1 ]
HAMM, RA [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期
关键词：
D O I：
10.1063/1.104457
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A study of the photoluminescence decay times in lattice-matched InGaAs/InP single quantum wells grown by two different epitaxial techniques is presented. We show that these decay times can be measured directly using a nonlinear photoluminescence autocorrelation technique. A model based on the saturation of localized exciton states describes the temporal behavior and the optical nonlinearities observed very well.
引用
收藏
页码：965 / 967
页数：3
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