NOISE TEMPERATURE MODELING OF ALGAAS/GAAS AND ALGAAS/INGAAS/GAAS HEMTS

被引：6
|
作者：
ANWAR, AFM
LIU, KW
机构：
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 09期
关键词：
D O I：
10.1016/0038-1101(94)90038-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An accurate modeling of noise temperature for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The analysis is based on a self-consistent solution of Schrodinger and Poisson's equations. Pseudomorphic HEMTs have a lower noise temperature as compared to normal AlGaAs/GaAs HEMTs. The minimum noise temperature in pseudomorphic HEMTs decreases with increasing quantum-well (QW) width. Noise temperature in general increases with increasing gate length.
引用
收藏
页码：1585 / 1588
页数：4
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