C-MOS 6502 OUTRUNS N-MOS VERSION

被引:0
|
作者
WALLER, L
机构
来源
ELECTRONICS | 1982年 / 55卷 / 23期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:171 / 171
页数:1
相关论文
共 50 条
  • [21] C-MOS PICKS UP GROUND
    LEBOSS, B
    ELECTRONICS, 1979, 52 (26): : 80 - 81
  • [22] ROCKWELL READIES C-MOS ON SAPPHIRE
    WALLER, L
    ELECTRONICS-US, 1979, 52 (12): : 48 - 48
  • [23] 硅栅n-MOS工艺的发展
    D.P.Wadhawan
    江泽福
    微电子学, 1986, (05) : 89 - 93
  • [24] ON THE DEVELOPMENT OF POLY GATE N-MOS TECHNOLOGY
    WADHAWAN, OP
    SRIVASTAVA, A
    RUNTHALA, DP
    SHAKHAWAT, SS
    ANDHARE, PN
    DWIVEDI, VK
    KHOKLE, WS
    MICROELECTRONICS AND RELIABILITY, 1985, 25 (03): : 437 - 445
  • [25] RCA, MOTOROLA COMBINE ON C-MOS
    LINEBACK, JR
    FIELDS, SW
    ELECTRONICS, 1982, 55 (19): : 54 - &
  • [26] STANDARD FOR N-MOS EASES IC DESIGN
    FIELDS, SW
    ELECTRONICS-US, 1982, 55 (06): : 39 - 40
  • [27] C-MOS PROMISES HUGE DYNAMIC RAMS
    COHEN, C
    ELECTRONICS, 1981, 54 (20): : 74 - &
  • [28] High temperature reliability of SiC n-MOS devices up to 630 °C
    Ghosh, Ruby N.
    Loloee, Reza
    Isaacs-Smith, Tamara
    Williams, John R.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 1039 - 1042
  • [29] C-MOS COUNTER SETS DIVIDERS MODULUS
    SHAVIT, A
    ELECTRONICS, 1980, 53 (02): : 129 - 129
  • [30] PROPOSAL FOR AN IMPLEMENTATION OF REVERSIBLE GATES IN C-MOS
    DEVOS, A
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (02) : 293 - 302