MONITORING AND DIAGNOSIS OF PLASMA ETCH PROCESSES

被引：16
|
作者：
DOLINS, SB
SRIVASTAVA, A
FLINCHBAUGH, BE
机构：
[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA
来源：
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1988年 / 1卷 / 01期
关键词：
ARTIFICIAL INTELLIGENCE - Expert Systems - SPECTROSCOPIC ANALYSIS - Computer Aided Analysis - SPECTROSCOPY; EMISSION - Computer Applications;
D O I：
10.1109/66.4369
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Plasma etching removes material from a silicon wafer by applying power and gases in a chamber. As material is removed from a wafer, the amount of particular chemicals given off can be measured; this technique is called emission spectroscopy and the measurements are called endpoint traces. An expert system that automatically interprets the traces has been designed and built. The system combines signal-to-symbol transformations for data abstraction and rule-based reasoning for diagnosis. The system detects problems as soon as they occur and also determines their causes.
引用
收藏
页码：23 / 27
页数：5
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