CURRENT LINES AND ACCURATE CONTACT CURRENT EVALUATION IN 2-D NUMERICAL-SIMULATION OF SEMICONDUCTOR-DEVICES

被引:0
|
作者
PALM, E [1 ]
VANDEWIELE, F [1 ]
机构
[1] CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,PHYS SECT,MICROELECTR LAB,B-1348 LOUVAIN LA NEUVE,BELGIUM
关键词
D O I
10.1109/TCAD.1985.1270148
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:496 / 503
页数:8
相关论文
共 50 条
  • [21] 2-D current field numerical simulation integrating Yangtze Estuary with Hangzhou Bay
    Hu, KL
    Ding, PX
    Zhu, SX
    Cao, ZY
    CHINA OCEAN ENGINEERING, 2000, 14 (01) : 89 - 102
  • [22] A NEW ALGORITHM FOR STEADY-STATE 2-D NUMERICAL-SIMULATION OF MOSFETS
    PERNG, RK
    WU, CY
    SOLID-STATE ELECTRONICS, 1990, 33 (02) : 287 - 293
  • [23] 2-DIMENSIONAL CURRENT-DENSITY DISTRIBUTION WITHIN 3-TERMINAL SEMICONDUCTOR-DEVICES
    HU, SP
    RABINOVICI, BM
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2624 - 2630
  • [24] NUMERICAL MODELING OF NON-ISOTHERMAL TRANSIENT PROCESSES IN POWER SEMICONDUCTOR-DEVICES AT THE HIGH FORWARD CURRENT-DENSITY
    VELMRE, EV
    NURSTE, IO
    FREYDIN, BP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1989, 32 (01): : 80 - 82
  • [25] 2-D stationary model of current filament in point contact geometry
    Novak, Vit
    Hirschinger, Juergen
    Prettl, Wilhelm
    Niedernostheide, Franz-Josef
    Acta Technica CSAV (Ceskoslovensk Akademie Ved), 1997, 42 (06): : 685 - 692
  • [26] 2-D NUMERICAL-SIMULATION OF THE CHARGE-TRANSFER IN GAAS BCCDS IN THE GHZ RANGE
    SODINI, D
    TOUBOUL, A
    RIGAUD, D
    GODIN, J
    PHYSICA B & C, 1985, 129 (1-3): : 568 - 572
  • [27] A 2-D numerical simulation of the circulation in the envelope of a contact binary system, an update
    Zhou, DQ
    Leung, KC
    THIRD PACIFIC RIM CONFERENCE ON RECENT DEVELOPMENT ON BINARY STAR RESEARCH, 1997, 130 : 95 - 101
  • [28] Induced-current electrical impedance tomography: A 2-D theoretical simulation
    Zlochiver, S
    Rosenfeld, M
    Abboud, S
    IEEE TRANSACTIONS ON MEDICAL IMAGING, 2003, 22 (12) : 1550 - 1560
  • [29] A NEW GRID-GENERATION METHOD FOR 2-D SIMULATION OF DEVICES WITH NONPLANAR SEMICONDUCTOR SURFACE
    CHIN, SP
    WU, CY
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1993, 12 (09) : 1337 - 1344
  • [30] Establishing an accurate numerical model for the 2D-simulation of buried contact cells
    Altermatt, PP
    Heiser, G
    Kiesewetter, T
    McIntosh, KR
    Honsberg, CB
    Wenham, SR
    Green, MA
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 179 - 182